Figure 8.

Results from the work of Gerardot et al.[21]. FSS of three different InGaAs/GaAs QDs (A, B and C) vs. their emission energy, as a lateral electric field is applied. Reprinted with permission from Gerardot et al., Manipulating exciton fine structure in quantum dots with a lateral electric field, Appl. Phys. Lett. 90, 041101, (2007). Copyright 2007, American Institute of Physics.

Plumhof et al. Nanoscale Research Letters 2012 7:336   doi:10.1186/1556-276X-7-336
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