Figure 10.

Results from the work of Plumhof et al.[24]. Behavior of the X-emission of a GaAs/AlGaAs QWPF as anisotropic biaxial stress is applied. (a) Color-coded PL intensity vs. polarization angle, ϕ, and emission energy, E(ϕF), for different values of F applied to the PMN-PT (the field values for the panels 1 to 4 are indicated in (f)). The intensity is normalized to the highest intensity value for each polarization measurement (1-4). The dashed lines indicate the rotation of the polarization orientation. The x direction in (b) is parallel to F and to εand corresponds to polarization angles of 0°, 180°,.. and coincides with the polarization orientation of the high-energy component at F = −20 kV/cm (panel 4). (b) Sketch of the device consisting of a QD-membrane glued on a side of a PMN-PT crystal. (c)(e) Polarization dependence in polar coordinates of the relative emission energy, ΔE, (i.e., the mean emission energy, E(F), for each value of F is subtracted) for panels 1, 2, and 4, respectively, of (a). (f) Polarization orientation of the high-energy component with respect to x vs. E(F). The dots marked by red circles correspond to the data shown in (a). (g) FSS vs. E(F). Reprinted figure with permission from Plumhof et al., Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-x As and InxGa1-xAs/GaAs quantum dots, Phys. Rev. B. 83, 121302(R), (2011). Copyright 2011, American Institute of Physics.

Plumhof et al. Nanoscale Research Letters 2012 7:336   doi:10.1186/1556-276X-7-336
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