Table 1
Standard E° of oxidants of interest and approximate positions of VBM at the silicon surface
Species	E°/V	Half-reaction
	0.5355
VBM (n, surface)	0.67
	0.771
	0.8665
VBM (p, surface)	0.9
	0.957
	0.991
	1.0873
	1.195
	1.350
	1.35827
	1.47
	1.482
	1.507
	1.72
	2.0

E°, electrode potentials; VBM, valence band maximum.

Kolasinski and Gogola Nanoscale Research Letters 2012 7:323   doi:10.1186/1556-276X-7-323