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Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition

Guoqing Miao* and Dengwei Zhang

Author Affiliations

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People’s Republic of China

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Nanoscale Research Letters 2012, 7:321  doi:10.1186/1556-276X-7-321

Published: 20 June 2012


Catalyst-free InP nanowires were grown on Si (100) substrates by low-pressure metal organic chemical vapor deposition. The different stages of nanowire growth were investigated. The scanning electron microscopy images showed that the density of the nanowires increased as the growth continued. Catalyzing indium droplets could still be fabricated in the nanowire growing process. X-ray diffraction showed that the nanowires grown at different stages were single crystalline with <111 > growth direction. The photoluminescence studies carried out at room temperature on InP nanowires reveal that the blueshift of photoluminescence decreased as the growing time accumulates, which is related to the increase in the diameter, rather than the length. Raman spectra for nanowires at different growing stages show that the quality of the nanowire changes. The growth of InP nanowires at different growing stages is demonstrated as a dynamic process.

InP; nanowire; catalyst-free growth; MOCVD; photoluminescence; Raman