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A novel method for crystalline silicon solar cells with low contact resistance and antireflection coating by an oxidized Mg layer

Jonghwan Lee1, Youn-Jung Lee1, Minkyu Ju1, Kyungyul Ryu1, Bonggi Kim1 and Junsin Yi12*

Author Affiliations

1 School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea

2 Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, South Korea

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Nanoscale Research Letters 2012, 7:32  doi:10.1186/1556-276X-7-32

Published: 5 January 2012


One of the key issues in the solar industry is lowering dopant concentration of emitter for high-efficiency crystalline solar cells. However, it is well known that a low surface concentration of dopants results in poor contact formation between the front Ag electrode and the n-layer of Si. In this paper, an evaporated Mg layer is used to reduce series resistance of c-Si solar cells. A layer of Mg metal is deposited on a lightly doped n-type Si emitter by evaporation. Ag electrode is screen printed to collect the generated electrons. Small work function difference between Mg and n-type silicon reduces the contact resistance. During a co-firing process, Mg is oxidized, and the oxidized layer serves as an antireflection layer. The measurement of an Ag/Mg/n-Si solar cell shows that Voc, Jsc, FF, and efficiency are 602 mV, 36.9 mA/cm2, 80.1%, and 17.75%, respectively. It can be applied to the manufacturing of low-cost, simple, and high-efficiency solar cells.

solar cell; Mg metal film; low-series contact resistance; antireflection coating.