The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs
1 Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, Tampere, FIN-33720, Finland
2 Institute of Physical Chemistry, University of Hamburg, Grindelallee 117, Hamburg, 20146, Germany
Nanoscale Research Letters 2012, 7:313 doi:10.1186/1556-276X-7-313Published: 19 June 2012
We report the temperature-dependent photoluminescence of single site-controlled and self-assembled InAs quantum dots. We have used nanoimprint lithography for patterning GaAs(100) templates and molecular beam epitaxy for quantum dot deposition. We show that the influence of the temperature on the photoluminescence properties is similar for quantum dots on etched nanopatterns and randomly positioned quantum dots on planar surfaces. The photoluminescence properties indicate that the prepatterning does not degrade the radiative recombination rate for the site-controlled quantum dots.