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The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs

Juha Tommila1*, Christian Strelow2, Andreas Schramm1, Teemu V Hakkarainen1, Mihail Dumitrescu1, Tobias Kipp2 and Mircea Guina1

Author Affiliations

1 Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, Tampere, FIN-33720, Finland

2 Institute of Physical Chemistry, University of Hamburg, Grindelallee 117, Hamburg, 20146, Germany

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Nanoscale Research Letters 2012, 7:313  doi:10.1186/1556-276X-7-313

Published: 19 June 2012


We report the temperature-dependent photoluminescence of single site-controlled and self-assembled InAs quantum dots. We have used nanoimprint lithography for patterning GaAs(100) templates and molecular beam epitaxy for quantum dot deposition. We show that the influence of the temperature on the photoluminescence properties is similar for quantum dots on etched nanopatterns and randomly positioned quantum dots on planar surfaces. The photoluminescence properties indicate that the prepatterning does not degrade the radiative recombination rate for the site-controlled quantum dots.

III-V semiconductors; InAs; Quantum dots; Site-controlled quantum dots; Molecular beam epitaxy; Nanoimprint lithography; 78, optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter; 78.67.-n, optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; 78.67.Hc, quantum dots