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Structure and electrical properties of sputtered TiO2/ZrO2 bilayer composite dielectrics upon annealing in nitrogen

Ming Dong1, Hao Wang2*, Cong Ye2*, Liangping Shen2, Yi Wang2, Jieqiong Zhang2 and Yun Ye2

Author affiliations

1 State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shanxi, 710049, China

2 Faculty of Physics and Electronic Technology, Hubei University, Wuhan, 430062, China

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Citation and License

Nanoscale Research Letters 2012, 7:31  doi:10.1186/1556-276X-7-31

Published: 5 January 2012


The high-k dielectric TiO2/ZrO2 bilayer composite film was prepared on a Si substrate by radio frequency magnetron sputtering and post annealing in N2 at various temperatures in the range of 573 K to 973 K. Transmission electron microscopy observation revealed that the bilayer film fully mixed together and had good interfacial property at 773 K. Metal-oxide-semiconductor capacitors with high-k gate dielectric TiO2/ZrO2/p-Si were fabricated using Pt as the top gate electrode and as the bottom side electrode. The largest property permittivity of 46.1 and a very low leakage current density of 3.35 × 10-5 A/cm2 were achieved for the sample of TiO2/ZrO2/Si after annealing at 773 K.