|
Resolution: standard / high Figure 6.
Electronic band structure and projected DOS for NH3 adsorption on a [111]-oriented SiNW Electronic band structures (left panels), showing
a deep state, a donor shallow state close to the conduction band edge and a donor
state fell inside the conduction band for (a) 1.0-, (b) 1.5-, and (c) 2.0-nm-thick SiNWs, respectively. The projected DOS (right panels) illustrates the
contribution of the molecular orbitals.
Miranda et al. Nanoscale Research Letters 2012 7:308 doi:10.1186/1556-276X-7-308 |