Figure 2.

Electronic band structure and projected DOS with NH3 adsorbed at a {110} facet. Electronic band structures, NH3 adsorption yield n-type doping, pining the Fermi level at the bottom of the conduction band (left panels) for SiNWs along the (a) [112], (b) [110], (c) [001], and (d) [111] directions. The projected DOS (right panels) illustrates the contribution of the molecular orbitals.

Miranda et al. Nanoscale Research Letters 2012 7:308   doi:10.1186/1556-276X-7-308
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