Figure 6.

The cross sectional HR-TEM images. (a) as-deposited poly Ge and (b) Ge dot with laser energy of 700 mJ/cm². The inset of (b) shows the cross-sectional TEM image of Ge dots. The crystallization quality of Ge dot is also improved as compare with as-deposited poly Ge. (c) The compositions of intermediate layer and dot by EDS after laser annealing. The Ge content of intermediate layer and dot are 49% and 93%, respectively.