Figure 2.

Top-view SEM of as-deposited poly Ge by UHV-CVD (a) and Ge nano-dot formation procedure (b). Due to the properties of low melting point and higher nucleation process of Ge, dots were self-assembled and formatted dots by the SK growth mode.

Lee and Chen Nanoscale Research Letters 2012 7:307   doi:10.1186/1556-276X-7-307
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