The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing
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Nanoscale Research Letters 2012, 7:307 doi:10.1186/1556-276X-7-307Published: 18 June 2012
Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.