SpringerOpen Newsletter

Receive periodic news and updates relating to SpringerOpen.

Open Access Highly Accessed Nano Express

The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing

Min-Hung Lee* and Pin-Guang Chen

Author Affiliations

Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan

For all author emails, please log on.

Nanoscale Research Letters 2012, 7:307  doi:10.1186/1556-276X-7-307

Published: 18 June 2012

Abstract

Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.

Keywords:
Re-crystallization; Self-assembled; Excimer laser