Gap modification of atomically thin boron nitride by phonon mediated interactions
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Nanoscale Research Letters 2012, 7:303 doi:10.1186/1556-276X-7-303Published: 14 June 2012
A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ =1, indicating that a proportion of the measured BN bandgap may have a phonon origin.