Open Access Nano Express

Gap modification of atomically thin boron nitride by phonon mediated interactions

James P Hague

Author affiliations

Department of Physical Sciences, The Open University, Walton Hall, Milton Keynes, MK7 6AA, UK

Citation and License

Nanoscale Research Letters 2012, 7:303  doi:10.1186/1556-276X-7-303

Published: 14 June 2012

Abstract

A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ =1, indicating that a proportion of the measured BN bandgap may have a phonon origin.

Keywords:
Boron nitride; Electron-phonon interactions; Semiconductors; Two-dimensional materials; Graphene