Nano Express
Gap modification of atomically thin boron nitride by phonon mediated interactions
Department of Physical Sciences, The Open University, Walton Hall, Milton Keynes, MK7 6AA, UK
Nanoscale Research Letters 2012, 7:303 doi:10.1186/1556-276X-7-303
Published: 14 June 2012Abstract
A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ =1, indicating that a proportion of the measured BN bandgap may have a phonon origin.
