Figure 4.

J-Vcharacteristic curves of G/n-Si devices, rectification and ideality factors. (a) The J-V characteristic curves of G/n-Si devices were collected in dark. (b) The rectification factors (left y-axis) and the ideality factors (right y-axis) of G/n-Si devices with different graphene source and different thickness.

Mohammed et al. Nanoscale Research Letters 2012 7:302   doi:10.1186/1556-276X-7-302
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