Nano Express
Junction investigation of graphene/silicon Schottky diodes
Author affiliations
Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR, 870-71656, USA
Citation and License
Nanoscale Research Letters 2012, 7:302 doi:10.1186/1556-276X-7-302
Published: 11 June 2012Abstract
Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed between graphene flakes and silicon n-type substrates exhibit good photovoltaic conversion efficiency while graphene/p-Si devices have poor light harvesting capability.
