Junction investigation of graphene/silicon Schottky diodes
Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR, 870-71656, USA
Nanoscale Research Letters 2012, 7:302 doi:10.1186/1556-276X-7-302Published: 11 June 2012
Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed between graphene flakes and silicon n-type substrates exhibit good photovoltaic conversion efficiency while graphene/p-Si devices have poor light harvesting capability.