Figure 6.

The diagram of energy levels of trapping state for CdSeS NCs and its photoluminescence decays. (a) Diagram of energy levels of trapping state for CdS NCs with increasing Se dopant. Upon the increase of Se dopant, trapping states shift up in energy, then form trapping energy band, translate to a new valence band. CBM, conduction band minimum; VBM, valance band maximum. (b) Normalized photoluminescence decays of studied yellow- and red-emitting CdSeS NCs embedded in PMMA (black point) and corresponding fitting curves.

Wu et al. Nanoscale Research Letters 2012 7:301   doi:10.1186/1556-276X-7-301
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