Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer
1 Energy Research Division, Daegu Gyeongbuk Institute of Science & Technology (DGIST), 50-1, Sang-Ri, Hyeonpung-Myeon, Dalseong-gun, Daegu, 711-873, South Korea
2 Department of Electronic Engineering, Yeungnam University (YU), 214-1, Dae-Dong, Gyeongsan-Si, Gyeongbuk, 712-749, South Korea
Nanoscale Research Letters 2012, 7:29 doi:10.1186/1556-276X-7-29Published: 5 January 2012
In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it.