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Table 2
Structural parameters of S1 and S2 samples obtained from the XRD and AFM data
Sample	t_GaN/t_AlN(nm)		R_curv.(m)	N_pin.(×10⁸ cm⁻²)	N_cr.(×10³ cm⁻¹)	L_ter.(nm)
Sample	Nominal	Actual	R_curv.(m)	N_pin.(×10⁸ cm⁻²)	N_cr.(×10³ cm⁻¹)	L_ter.(nm)
S1	1.98/1.98	1.70 ± 0.07/2.30 ± 0.06	4	0.86	1.5	300
S2	1.98/1.98	1.50 ± 0.04/2.50 ± 0.05	10	1.8	None	900

Kladko et al. Nanoscale Research Letters 2012 7:289 doi:10.1186/1556-276X-7-289

Table 2