Figure 5.

Lattice parametersaandcfor SLs and GaN-buffer layers in samples S1 and S2. Vertical solid lines connect the GaN buffer layers with the fully strained SLS points predicted by theory for that structure, and the dashed (relaxation) line connects the fully strained SLS with the fully relaxed SLR points.

Kladko et al. Nanoscale Research Letters 2012 7:289   doi:10.1186/1556-276X-7-289
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