Table 1

DRIE of silicon with SF6and C4F8plasma
Process Conditions Value
Source Power 1500 W
Bias Power 12 W
SF6 Flow 250 sccm
C4F8 Flow 300 sccm
Silicon Etch Rate 1.5 μm/min

Bien et al.

Bien et al. Nanoscale Research Letters 2012 7:288   doi:10.1186/1556-276X-7-288

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