Table 1 |
|
| DRIE of silicon with SF6and C4F8plasma | |
| Process Conditions | Value |
| Source Power | 1500 W |
| Bias Power | 12 W |
| SF6 Flow | 250 sccm |
| C4F8 Flow | 300 sccm |
| Silicon Etch Rate | 1.5 μm/min |
Bien et al. Nanoscale Research Letters 2012 7:288 doi:10.1186/1556-276X-7-288
