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Resolution: standard / high Figure 6.
Memory characteristics ZnO NW FeFET device. (a) IDS-VG transfer characteristics at VDS = 2 V of a FeFET device based on a ferroelectric PZT gate oxide. (b) Endurance tests by measuring the off- and on-state drain current at a fixed VDS = 2 V as a function of programming cycles of the ZnO nanowire-based FET devices.
Liu et al. Nanoscale Research Letters 2012 7:285 doi:10.1186/1556-276X-7-285 |
