ZnO NW FeFET device. (a) Schematics of the device configuration. (b) SEM image of a single device. (c) Corresponding band diagram showing the gate effect. (d) Idealized field-effect model of the ZnO NW FeFET device at off and on states, without considering surface and interface trap charges.
Liu et al. Nanoscale Research Letters 2012 7:285 doi:10.1186/1556-276X-7-285