The schematic structure and memory performance of the device. (a) Pt-SrBi2Ta2O9-Hf-Al-O-Si MFIS FET. (b) Data retention characteristic of the Pt-SrBi2Ta2O9-Hf-Al-O-Si FET. After application of the poling voltages ±6 V, the drain currents of both on and off states were measured as a function of time. Vkeep =1.7 V and VD =0.1 V. (c) Endurance cycle performance of the Pt-SrBi2Ta2O9-Hf-Al-O-Si FET. The applied switching cycle is shown in the inset. The drain currents of the on- and off- states at VG = 2 V and VD = 0.1 V were measured between multiple cycles.
Liu et al. Nanoscale Research Letters 2012 7:285 doi:10.1186/1556-276X-7-285