Figure 15.

Electrical switch characteristics of the fabricated device. (a) Resistance hysteretic loop. The black curve represents the experimentally measured D of the PVDF-TrFE thin film with similar thickness. Inset (a): the electric displacement continuity equation at ferroelectric-graphene interface. Inset (b): a polarized PVDF-TrFE molecule. Cyan, gray, and white atoms represent fluorine, carbon, and hydrogen, respectively. (b) Electric hysteresis loop. R is used as a function of VTG for the graphene-ferroelectric sample. From the linear part of this curve at high voltage, the charge carrier mobility is estimated to be 700 cm2 V−1 s−1, taking κPVDF = 10. (c) Switching from 0 to 0 state in graphene-ferroelectric memory by a full loop sweep of VTG (±85 V). (d) Switching from 1 to 1 state by an asymmetrical loop sweep of VTG from (85 to −34 V). (e) Switching from 0 to 1 state. (f) Switching from 1 to 0 state.

Liu et al. Nanoscale Research Letters 2012 7:285   doi:10.1186/1556-276X-7-285
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