Figure 12.

Transfer characteristics of the device and calculated electric field mappings around the SWCNT channel. (a) Transfer characteristics of the FeFET memory unit with a 300-nm-SWCNT as conducting channel. (b,c) Calculated electric field mappings around the SWCNT channel at 1 and 0.1 V gate voltages, respectively. The red dashed line in the scale bar indicates the measured coercive electric field of the ferroelectric film.

Liu et al. Nanoscale Research Letters 2012 7:285   doi:10.1186/1556-276X-7-285
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