Figure 11.

Schematic sketch and TEM images of the CNT FeFET and theI_D-V_Gtransfer characteristics. (a) Schematic sketch of the fabricated CNT FeFET. (b) Structural characterization of BaTiO₃ thin films deposited on STON substrates by TEM, indicating the coherent epitaxial growth of the BaTiO₃ thin film with respect to the STON substrate. (c) Typical I_D-V_G transfer characteristics of the CNT FeFET made of SWCNT with 600 nm in length. The arrows indicate a clockwise hysteresis loop.