Figure 11.

Schematic sketch and TEM images of the CNT FeFET and theID-VGtransfer characteristics. (a) Schematic sketch of the fabricated CNT FeFET. (b) Structural characterization of BaTiO3 thin films deposited on STON substrates by TEM, indicating the coherent epitaxial growth of the BaTiO3 thin film with respect to the STON substrate. (c) Typical ID-VG transfer characteristics of the CNT FeFET made of SWCNT with 600 nm in length. The arrows indicate a clockwise hysteresis loop.

Liu et al. Nanoscale Research Letters 2012 7:285   doi:10.1186/1556-276X-7-285
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