Figure 5.

Coulomb intervals and binding energies. (a) Electron-electron , electron-hole and hole-hole Coulomb integrals for electron and hole occupying their ground sstates of InAs/InP nanowire quantum dot (h=2.4 nm, d=18 nm) as functions of substrate orientation. (b) Biexciton (XX) and trion (^X−,^{X +} ) binding energies calculated by perturbative approach (Hartree-Fock approximation). (c) Biexciton (XX) and trion (^X−, X ⁺ ) binding energies calculated by configuration interaction approach (including Coulomb scattering terms up to the d shell). _EHF, binding energy by Hartree-Fock approximation; _ECI, binding energy by configuration interaction approach.