Coulomb intervals and binding energies. (a) Electron-electron , electron-hole and hole-hole Coulomb integrals for electron and hole occupying their ground sstates of InAs/InP nanowire quantum dot (h=2.4 nm, d=18 nm) as functions of substrate orientation. (b) Biexciton (XX) and trion (X−,X + ) binding energies calculated by perturbative approach (Hartree-Fock approximation). (c) Biexciton (XX) and trion (X−, X + ) binding energies calculated by configuration interaction approach (including Coulomb scattering terms up to the d shell). EHF, binding energy by Hartree-Fock approximation; ECI, binding energy by configuration interaction approach.
Zieliński Nanoscale Research Letters 2012 7:265 doi:10.1186/1556-276X-7-265