Figure 5.

Coulomb intervals and binding energies. (a) Electron-electron <a onClick="popup('http://www.nanoscalereslett.com/content/7/1/265/mathml/M11','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/7/1/265/mathml/M11">View MathML</a>, electron-hole <a onClick="popup('http://www.nanoscalereslett.com/content/7/1/265/mathml/M12','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/7/1/265/mathml/M12">View MathML</a> and hole-hole <a onClick="popup('http://www.nanoscalereslett.com/content/7/1/265/mathml/M13','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/7/1/265/mathml/M13">View MathML</a> Coulomb integrals for electron and hole occupying their ground sstates of InAs/InP nanowire quantum dot (h=2.4 nm, d=18 nm) as functions of substrate orientation. (b) Biexciton (XX) and trion (X,X + ) binding energies calculated by perturbative approach (Hartree-Fock approximation). (c) Biexciton (XX) and trion (X, X + ) binding energies calculated by configuration interaction approach (including Coulomb scattering terms up to the d shell). EHF, binding energy by Hartree-Fock approximation; ECI, binding energy by configuration interaction approach.

Zieliński Nanoscale Research Letters 2012 7:265   doi:10.1186/1556-276X-7-265
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