Figure 3.

Lateral (in-plane) projection through quantum dot center for two functions of strain. The biaxial strain <a onClick="popup('http://www.nanoscalereslett.com/content/7/1/265/mathml/M5','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/7/1/265/mathml/M5">View MathML</a> (upper row) and the average shear strain <a onClick="popup('http://www.nanoscalereslett.com/content/7/1/265/mathml/M6','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/7/1/265/mathml/M6">View MathML</a> (lower row) of the InAs/InP nanowire quantum dot (h = 2.4 nm, d = 18 nm) as functions of substrate orientation.

ZieliƄski Nanoscale Research Letters 2012 7:265   doi:10.1186/1556-276X-7-265
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