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Figure 3.

Lateral (in-plane) projection through quantum dot center for two functions of strain. The biaxial strain

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(upper row) and the average shear strain

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(lower row) of the InAs/InP nanowire quantum dot (h = 2.4 nm, d = 18 nm) as functions of substrate orientation.

Zieliński Nanoscale Research Letters 2012 7:265 doi:10.1186/1556-276X-7-265
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