Figure 1.

Hydrostatic strain distribution. The trace of the strain tensor distribution for InAs/InP nanowire quantum dot (h = 2.4 nm, d = 18 nm) as a function of substrate orientation. Upper row shows lateral (in-plane) projection through quantum dot center, while lower row projection was calculated for perpendicular [1
    1
0] plane.

ZieliƄski Nanoscale Research Letters 2012 7:265   doi:10.1186/1556-276X-7-265
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