Table 1 |
|
|
Sputtering conditions of ZnS films |
|
|
Parameter |
Condition |
|
|
|
|
Target |
ZnS (99.99% pure) |
|
Substrate |
Corning E2000 glass |
|
RF power |
120 W |
|
Sputtering gas |
Pure argon (55 sccm) |
|
Deposition time |
20 min |
|
Sputtering pressure |
3 × 10-2 Torr |
|
Substrate temperature |
100°C, 200°C, 250°C, 300°C, 350°C, 400°C |
|
Target to substrate distance |
50 mm |
|
|
|
|
Hwang et al. Nanoscale Research Letters 2012 7:26 doi:10.1186/1556-276X-7-26 |
|
