Function of applied gate voltage. (a) Ge, (b) S, (c) κe, and (d) ZT as a function of applied gate voltage for kBT = 1Γ0(solid), 2Γ0(dashed), and 3Γ0(dotted). Eℓ = EF + 10Γ0 and tc = 3Γ0. Other parameters are the same as those of Figure 1. The curves with triangle marks are for the case without electron Coulomb interactions for kBT = 3Γ0.
T Kuo and Chang Nanoscale Research Letters 2012 7:257 doi:10.1186/1556-276X-7-257