Figure 4.

Function of applied gate voltage. (a) Ge, (b) S, (c) κe, and (d) ZT as a function of applied gate voltage for kBT = 1Γ0(solid), 2Γ0(dashed), and 3Γ0(dotted). E= EF + 10Γ0 and tc = 3Γ0. Other parameters are the same as those of Figure 1. The curves with triangle marks are for the case without electron Coulomb interactions for kBT = 3Γ0.

T Kuo and Chang Nanoscale Research Letters 2012 7:257   doi:10.1186/1556-276X-7-257
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