Polarized recombination of acoustically transported carriers in GaAs nanowires
1 Materials Science Institute, University of Valencia, Paterna 46980, Catedrático José Beltrán 2, Spain
2 Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin 10117, Germany
3 Fundació General de la Universitat de València, Valencia 46010, Spain
Citation and License
Nanoscale Research Letters 2012, 7:247 doi:10.1186/1556-276X-7-247Published: 14 May 2012
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport.