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Open Access Nano Express

Polarized recombination of acoustically transported carriers in GaAs nanowires

Michael Möller1*, Alberto Hernández-Mínguez2, Steffen Breuer2, Carsten Pfüller2, Oliver Brandt2, Mauricio M de Lima13, Andrés Cantarero1, Lutz Geelhaar2, Henning Riechert2 and Paulo V Santos2

Author affiliations

1 Materials Science Institute, University of Valencia, Paterna 46980, Catedrático José Beltrán 2, Spain

2 Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin 10117, Germany

3 Fundació General de la Universitat de València, Valencia 46010, Spain

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Citation and License

Nanoscale Research Letters 2012, 7:247  doi:10.1186/1556-276X-7-247

Published: 14 May 2012

Abstract

The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport.

Keywords:
Charge transport; Spin transport; GaAs; Nanowires; Surface acoustic waves; Photoluminescence; Polarization