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Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique

Jiang-Yong Zhang1, Wen-Jie Liu1, Ming Chen1, Xiao-Long Hu1, Xue-Qin Lv2, Lei-Ying Ying1 and Bao-Ping Zhang1*

Author Affiliations

1 Laboratory of Micro/Nano Optoelectronics, Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, Fujian, People's Republic of China

2 Pen-Tung Sah Micro/Nano Technology Research Center, Xiamen University, Xiamen 361005, Fujian, People's Republic of China

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Nanoscale Research Letters 2012, 7:244  doi:10.1186/1556-276X-7-244

Published: 6 May 2012


GaN-based light emitting diodes (LEDs) fabricated on sapphire substrates were successfully transferred onto silicon substrates using a double-transfer technique. Compared with the conventional LEDs on sapphire, the transferred LEDs showed a significant improvement in the light extraction and thermal dissipation, which should be mainly attributed to the removal of sapphire and the good thermal conductivity of silicon substrate. Benefited from the optimized wafer bonding process, the transfer processes had a negligible influence on electrical characteristics of the transferred LEDs. Thus, the transferred LEDs showed a similar current–voltage characteristic with the conventional LEDs, which is of crucial importance for practical applications. It is believed that the double-transfer technique offers an alternative way to fabricate high performance GaN-based thin-film LEDs.

GaN; Transferred light-emitting diodes; Thermal dissipation; Light extraction; Double-transfer; 81.05.Ea; 85.60.Bt; 85.60.Jb