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Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum

Xiangdong Xu1*, Shibin Li1, Yinchuan Wang2, Taijun Fan1, Yadong Jiang1, Long Huang1, Qiong He1 and Tianhong Ao1

Author affiliations

1 State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China

2 College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China

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Citation and License

Nanoscale Research Letters 2012, 7:243  doi:10.1186/1556-276X-7-243

Published: 6 May 2012


One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO2 surfaces. Moreover, low deposition rate is helpful for producing lateral SiNWs by VLS. But in OAG process, SiNWs can be grown on SiO2 surfaces, not on Si surfaces. This work reveals the methods of producing large-scale SiNWs in UHV.

Silicon nanowires; Preparation; Vapor–liquid-solid; Oxide-assisted growth; Ultrahigh vacuum