Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
1 State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China
2 College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
Citation and License
Nanoscale Research Letters 2012, 7:243 doi:10.1186/1556-276X-7-243Published: 6 May 2012
One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO2 surfaces. Moreover, low deposition rate is helpful for producing lateral SiNWs by VLS. But in OAG process, SiNWs can be grown on SiO2 surfaces, not on Si surfaces. This work reveals the methods of producing large-scale SiNWs in UHV.