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The heterojunction effects of TiO2 nanotubes fabricated by atomic layer deposition on photocarrier transportation direction

Yung-Huang Chang1, Chien-Min Liu1, Chih Chen1* and Hsyi-En Cheng2

Author Affiliations

1 Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu, Taiwan, 30010, Republic of China

2 Department of Electro-optical engineering, Southern Taiwan University, Tainan, Taiwan, 710, Republic of China

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Nanoscale Research Letters 2012, 7:231  doi:10.1186/1556-276X-7-231

Published: 23 April 2012


The heterojunction effects of TiO2 nanotubes on photoconductive characteristics were investigated. For ITO/TiO2/Si diodes, the photocurrent is controlled either by the TiO2/Si heterojunction (p-n junction) or the ITO-TiO2 heterojunction (Schottky contact). In the short circuit (approximately 0 V) condition, the TiO2-Si heterojunction dominates the photocarrier transportation direction due to its larger space-charge region and potential gradient. The detailed transition process of the photocarrier direction was investigated with a time-dependent photoresponse study. The results showed that the diode transitioned from TiO2-Si heterojunction-controlled to ITO-TiO2 heterojunction-controlled as we applied biases from approximately 0 to -1 V on the ITO electrode.