Figure 3.

NEP components for the 2D array of CEBs with a single SIN junction and a SN Andreev contact (marked by “1”) and with a double SIN junction (marked by “2”). The array consists of four CEBs in parallel (W = 4) and eight CEBs in series (N = 8). Dynamic resistance, Rd, is shown for both cases, on the right axis. Parameters: f = 7 THz, P0 = 0.02 fW, Iamp = 5 fA Hz−1/2, Vamp = 3 nV Hz−1/2 (JFET), R = 4 kOhm, Λ = 0.002 μm3, T = 70 mK, Tc = 400 mK. b) Fabrication of the CEB with the suppressed superconducting gap of the SIN tunnel junction.

Kuzmin Nanoscale Research Letters 2012 7:224   doi:10.1186/1556-276X-7-224
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