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Growth of catalyst-free high-quality ZnO nanowires by thermal evaporation under air ambient

Ping Liu*, Yanbin Li, Yanqing Guo and Zhenhua Zhang

Author affiliations

School of Electric and Information Engineering, Zhongyuan University of Technology, Zhengzhou 450007, China

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Citation and License

Nanoscale Research Letters 2012, 7:220  doi:10.1186/1556-276X-7-220

Published: 13 April 2012


ZnO nanowires have been successfully fabricated on Si substrate by simple thermal evaporation of Zn powder under air ambient without any catalyst. Morphology and structure analyses indicated that ZnO nanowires had high purity and perfect crystallinity. The diameter of ZnO nanowires was 40 to 100 nm, and the length was about several tens of micrometers. The prepared ZnO nanowires exhibited a hexagonal wurtzite crystal structure. The growth of the ZnO nanostructure was explained by the vapor-solid mechanism. The simplicity, low cost and fewer necessary apparatuses of the process would suit the high-throughput fabrication of ZnO nanowires. The ZnO nanowires fabricated on Si substrate are compatible with state-of-the-art semiconductor industry. They are expected to have potential applications in functional nanodevices.

zinc oxide; nanowire; thermal evaporation