Table 1

Deposition conditions of the a-Si1-xCx passivation layer

Deposition parameters

Conditions


Substrate

Glass and Si substrates

Base pressure

0.01 mTorr

Working pressure

3 mTorr

RF power

C target, 150 W

Si target, 100; 150; 175; and 200 W

Target-to-substrate distance

6 cm

Rotation speed

1, 700 rph

Target

4-inch Si and C

Sputtering gas

Ar, 40 sccm

Substrate temperature

RT


RF, radio frequency; RT, room temperature.

Joung et al. Nanoscale Research Letters 2012 7:22   doi:10.1186/1556-276X-7-22

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