Table 1 |
|
|
Deposition conditions of the a-Si1-xCx passivation layer |
|
|
Deposition parameters |
Conditions |
|
|
|
|
Substrate |
Glass and Si substrates |
|
Base pressure |
0.01 mTorr |
|
Working pressure |
3 mTorr |
|
RF power |
C target, 150 W |
|
Si target, 100; 150; 175; and 200 W |
|
|
Target-to-substrate distance |
6 cm |
|
Rotation speed |
1, 700 rph |
|
Target |
4-inch Si and C |
|
Sputtering gas |
Ar, 40 sccm |
|
Substrate temperature |
RT |
|
|
|
|
RF, radio frequency; RT, room temperature. |
|
|
Joung et al. Nanoscale Research Letters 2012 7:22 doi:10.1186/1556-276X-7-22 |
|
