SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system
1 School of Electrical Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea
2 Department of Applied Materials Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea
3 Solar Cell R&D Center, Shinsung Solar Energy Co., Ltd., Seongnam 463-420, Republic of Korea
4 School of Information and Computer Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
Nanoscale Research Letters 2012, 7:22 doi:10.1186/1556-276X-7-22Published: 5 January 2012
In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement.