Figure 1 .

Typical electrical transport properties of the single CdS NB MESFETs. (a) The current–voltage (I-V) curve measured between the source and drain electrodes. Inset: a typical FESEM image of a single CdS NB MESFET-based photodetector. (b) The red straight line shows the fitting result with the equation <a onClick="popup('http://www.nanoscalereslett.com/content/7/1/218/mathml/M2','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/7/1/218/mathml/M2">View MathML</a> where I0 is the reverse saturation current, q is the electronic charge, V is the applied bias, n is the diode ideality factor, k is the Bolzmann constant, and T is the absolute temperature.

Ye et al. Nanoscale Research Letters 2012 7:218   doi:10.1186/1556-276X-7-218
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