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Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)

Yu Ye1, Lun Dai1*, Lin Gan2, Hu Meng1, Yu Dai1, Xuefeng Guo2 and Guogang Qin1*

Author Affiliations

1 State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, China

2 College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China

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Nanoscale Research Letters 2012, 7:218  doi:10.1186/1556-276X-7-218

Published: 13 April 2012


Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal–semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors, the MESFET-based photodetector can make a balance among overall performance parameters, which is desired for practical device applications. We also present our recent work on graphene nanoribbon/semiconductor NW (SNW) heterojunction light-emitting diodes (LEDs). Herein, by taking advantage of both graphene and SNWs, we have fabricated, for the first time, the graphene-based nano-LEDs. This achievement opens a new avenue for developing graphene-based nano-electroluminescence devices. Moreover, the novel graphene/SNW hybrid devices can also find use in other applications, such as high-sensitivity sensor and transparent flexible devices in the future.

Schottky junction; Graphene; Nanowires; Nanobelts; Optoelectronics