Figure 4 .

Schematic drawing of the bending device, and the dark I-V characteristics and responsivity characteristics. (a) Schematic drawing of the bending device. (b) The I-V and (c) responsivity characteristics of the PD measured from flat and bending substrate in the dark.

Chen et al. Nanoscale Research Letters 2012 7:214   doi:10.1186/1556-276X-7-214
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