Figure 4 .
Schematic drawing of the bending device, and the dark I-V characteristics and responsivity characteristics. (a) Schematic drawing of the bending device. (b) The I-V and (c) responsivity characteristics of the PD measured from flat and bending substrate in the dark.
Chen et al. Nanoscale Research Letters 2012 7:214 doi:10.1186/1556-276X-7-214