Bending effects of ZnO nanorod metal–semiconductor–metal photodetectors on flexible polyimide substrate
1 Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 701, Taiwan
2 Department of Electronic Engineering, National Formosa University, Yunlin, 632, Taiwan
3 Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan
Citation and License
Nanoscale Research Letters 2012, 7:214 doi:10.1186/1556-276X-7-214Published: 12 April 2012
The authors report the fabrication and I-V characteristics of ZnO nanorod metal–semiconductor–metal photodetectors on flexible polyimide substrate. From field-emission scanning electron microscopy and X-ray diffraction spectrum, ZnO nanorods had a (0002) crystal orientation and a wurtzite hexagonal structure. During the I-V and response measurement, the flexible substrates were measured with (i.e., the radius of curvatures was 0.2 cm) and without bending. From I-V results, the dark current decreased, and the UV-to-visible rejection ratio increased slightly in bending situation. The decreasing tendency of the dark current under bending condition may be attributed to the increase of the Schottky barrier height.