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Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction

Michael Hanke*, Vladimir M Kaganer, Oliver Bierwagen, Michael Niehle and Achim Trampert

Author Affiliations

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin, D-10117, Germany

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Nanoscale Research Letters 2012, 7:203  doi:10.1186/1556-276X-7-203

Published: 29 March 2012


We studied the early stages of Gd2O3 epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy electron diffraction patterns both indicate that the growth begins without forming a three-dimensional crystalline film. The cubic bixbyite structure of Gd2O3 appears only after a few monolayers of deposition.