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A multilayered approach of Si/SiO to promote carrier transport in electroluminescence of Si nanocrystals

Ding Li, Yong-Bin Chen, Yong Ren, Jiang Zhu, You-Yuan Zhao and Ming Lu*

Author affiliations

Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai, 200433, China

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Citation and License

Nanoscale Research Letters 2012, 7:200  doi:10.1186/1556-276X-7-200

Published: 27 March 2012


The electroluminescence (EL) and photoluminescence of Si nanocrystals (Si-nc) from multilayered samples of Si/SiO are investigated. Si-nc are formed within Si and SiO layers after furnace annealing. It is found that the presence of Si interlayers creates extra carrier paths for EL emission. A comparative study is further performed on a multilayered Si/SiO sample and a single-layered one with Si and SiO homogeneously mixed. Both samples have the same ratio of Si to O and the same contents of Si and O. The multilayered sample is found to have higher EL intensity, less turn-on voltage, lower resistance, and higher current efficiency than the single-layered one. The results indicate that Si interlayers in Si/SiO may act as carrier channels, which promote carrier transport and enhance the EL emission of Si-nc.