A multilayered approach of Si/SiO to promote carrier transport in electroluminescence of Si nanocrystals
Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai, 200433, China
Nanoscale Research Letters 2012, 7:200 doi:10.1186/1556-276X-7-200Published: 27 March 2012
The electroluminescence (EL) and photoluminescence of Si nanocrystals (Si-nc) from multilayered samples of Si/SiO are investigated. Si-nc are formed within Si and SiO layers after furnace annealing. It is found that the presence of Si interlayers creates extra carrier paths for EL emission. A comparative study is further performed on a multilayered Si/SiO sample and a single-layered one with Si and SiO homogeneously mixed. Both samples have the same ratio of Si to O and the same contents of Si and O. The multilayered sample is found to have higher EL intensity, less turn-on voltage, lower resistance, and higher current efficiency than the single-layered one. The results indicate that Si interlayers in Si/SiO may act as carrier channels, which promote carrier transport and enhance the EL emission of Si-nc.