Figure 3.

Typical hysteresis characteristics of the IrOx-ND MIS capacitors and VFB shift with sweeping gate voltages. (a) Typical C-V hysteresis characteristics of the IrOx-ND MIS capacitors and (b) VFB shift with sweeping gate voltages for the IrOx-ND and pure Al2O3 charge-trapping devices.

Banerjee et al. Nanoscale Research Letters 2012 7:194   doi:10.1186/1556-276X-7-194
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